Æsoteric Positron
I AM GROOT (and so are you)
So, seeing the RAM prices go cheap, I am thinking about grabbing the opportunity and add a 8GB stick into HP Pavilion - 15-ec1052ax. It currently has a 8GB RAM module and with the following specifications:
Here's a screenshot from speccy:
I have been able to sort out this: Amazon.in: Buy G.SKILL Ripjaws SO-DIMM 8GB (1 * 8GB) DDR4 3200MHz CL22-22-22 1.20V Laptop Memory RAM - F4-3200C22S-8GRS Online at Low Prices in India | G.Skill Reviews & Ratings
Any suggestions? Would the RAM I choose be ideal? I would have bought the same model that I currently have, though, the problem is; its for 1K more, as it has low discount on it.
Code:
HWiNFO64 Version 7.06-4500
ECHAN ---------------------------------------------------------------------
[Current Computer]
[Operating System]
Memory --------------------------------------------------------------------
[General information]
Total Memory Size: 8 GBytes
Total Memory Size [MB]: 8192
[Current Performance Settings]
Maximum Supported Memory Clock: 1600.0 MHz
Current Memory Clock: 1597.1 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 22-22-22-52
Memory Channels Supported: 2
Memory Channels Active: 1
Command Rate: 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
Read to Read Delay (tRDRD_SD) Same DIMM: 4T
Read to Read Delay (tRDRD_DD) Different DIMM: 4T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 5T
Write to Write Delay (tWRWR_SD) Same DIMM: 6T
Write to Write Delay (tWRWR_DD) Different DIMM: 6T
Read to Write Delay (tRDWR): 11T
Write to Read Delay (tWRRD): 1T
Read to Precharge Delay (tRTP): 12T
Write to Precharge Delay (tWTP): 35T
Write Recovery Time (tWR): 24T
Row Cycle Time (tRC): 74T
Refresh Cycle Time (tRFC): 560T
Four Activate Window (tFAW): 34T
Row: 0 [P0 CHANNEL A/Bottom - Slot 1 (left)] - 8 GB PC4-25600 DDR4 SDRAM Samsung M471A1K43DB1-CWE
[General Module Information]
Module Number: 0
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1600.0 MHz (DDR4-3200 / PC4-25600)
Module Manufacturer: Samsung
Module Part Number: M471A1K43DB1-CWE
Module Revision: 0.0
Module Serial Number: 3824008247 (37BCEDE3)
Module Manufacturing Date: Year: 2020, Week: 25
Module Manufacturing Location: 2
SDRAM Manufacturer: Samsung
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.62500 ns (1600 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 1600.0 MHz: 22-22-22-52
Supported Module Timing at 1466.7 MHz: 21-21-21-47
Supported Module Timing at 1333.3 MHz: 19-19-19-43
Supported Module Timing at 1200.0 MHz: 17-17-17-39
Supported Module Timing at 1066.7 MHz: 15-15-15-35
Supported Module Timing at 933.3 MHz: 13-13-13-30
Supported Module Timing at 800.0 MHz: 11-11-11-26
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.500 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.900 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
Any suggestions? Would the RAM I choose be ideal? I would have bought the same model that I currently have, though, the problem is; its for 1K more, as it has low discount on it.